Application Of Tungsten and Molybdenum Components in Semiconductor Ion Implantation
Ion implantation refers to the phenomenon that when a beam of ions in a vacuum is shot at a solid material, it is resisted by the solid material and its speed is slowly reduced, and finally it stays in the solid material. During this period, a series of physical and chemical interactions will occur between the ion beam and the atoms or molecules in the material. The incident ions gradually lose energy and finally stay in the material, causing changes in the surface composition, structure and performance of the material, thereby optimizing the surface performance of the material or obtaining some new excellent performance.
Semiconductor ion implantation technology is a high-tech material surface modification technology. It has been widely used in semiconductor material doping, surface modification of metals, ceramics, polymers, etc.
Ion implantation, as an important doping technology in microelectronics technology, plays a key role in optimizing the surface performance of materials. In the contemporary manufacturing of large-scale integrated circuits, it can be said to be an indispensable means.
The ion implantation process has very high requirements for the high temperature performance and chemical corrosion resistance of the material. Therefore, the main components of the ionization chamber are made of tungsten, molybdenum or graphite.
Luoyang Rare Metal Research Material Co.,Ltd mainly produces supporting parts for ion implanters, and its main products are semiconductor ion implantation high-energy ion source components made of tungsten and molybdenum materials.
Our tungsten and molybdenum products for ion implanters have stable high purity and good mechanical properties to ensure that they are suitable for processing arc chamber parts with complex shapes.
