Tungsten Sputtering Target
2. Catalog: Tungsten product
3. Material: Tungsten
4. Purity: ≥99.95%
5. Density: 19.3 g/cm³
6. Shape: Plane target, Rotating target, Sputtering target, Square target, Tube target, Customized target with irregular shape.
7. Specification: Customized, Target weight≤300KG/PCS.
8. Surface: Cold rolled surface, Chemical cleaned surface, Polished surface
9. Application: Magnetron sputtering coating
10. Standard: ASTM B760, GB/T3875-83
11. Place Of Origin: Luoyang, China.
Introduction
The Tungsten Sputtering Target is high-purity materials used in the sputtering process, a physical vapor deposition (PVD) method employed to deposit thin films onto surfaces. Tungsten is a metal known for its high melting point (approximately 3422°C), hardness, and excellent electrical conductivity, making it an ideal material for sputtering targets in various industries, such as electronics, optics, and semiconductor manufacturing.
Features
Excellent High-Temperature Resistance
Tungsten has a melting point of up to 3422°C, giving it excellent high-temperature resistance. Additionally, during the sputtering process, the tungsten target can withstand the bombardment of high-energy ions and is not easily deformed or degraded. This allows the tungsten target to operate stably in high-temperature and high-energy environments.
Corrosion Resistance
Tungsten materials have good oxidation and corrosion resistance. In high-temperature or chemical environments, Tungsten Sputtering Target can effectively resist oxidation, acid, and alkali corrosion, ensuring that the target maintains good performance during multiple sputtering processes.
Wide Range of Uses
Our products are widely used in semiconductors, optoelectronics, magnetic materials, and other fields. In the semiconductor industry, tungsten thin films are used in the metallization process of integrated circuits. In the optical field, tungsten thin films are used to manufacture reflectors or coating materials.
Product Chemical Composition
|
Tungsten Target Chemical Composition |
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|
W Content (%) |
Impurity content (ppm) |
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|
Ti |
Na |
C |
Ca |
Mg |
Si |
Al |
As |
Fe |
Ni |
Pb |
P |
Cu |
/ |
/ |
|
|
≥99.95% |
≤10 ppm |
≤5 ppm |
≤20 ppm |
≤10 ppm |
≤7ppm |
≤10 ppm |
≤5 ppm |
≤10 ppm |
≤10 ppm |
≤6 ppm |
≤1 ppm |
≤8 ppm |
≤5 ppm |
/ |
/ |
Product Performance Parameters
|
Tungsten Sputtering Target Performance Parameters |
|
|
Sample Dimensions |
12mm×80mm×100mm |
|
Purity |
≥99.95% (3N5) |
|
Crystal structure |
Body-centered cubic (BCC) |
|
Grain Size |
43μm |
|
Density |
19.25 g/cm3 (HIP) |
|
Melting point |
3410°C (+ 20°C) |
|
Boiling point |
5900°C |
|
Thermal conductivity |
173 W/(m·K) |
|
Electrical conductivity |
18.3×10-6 S/m |
|
Coefficient of thermal expansion |
4.5×10-6/K-1 |
|
Hardness |
HV5:280-310 |
|
Surface Finish |
Ra≤0.4μm |
Product Production Process
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